Related Experiment Video
Updated: May 13, 2026

12:19
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
Published on: April 4, 2017
Hitless wavelength-selective switch based on quantum well second-order series-coupled microring resonators.
Hiroki Ikehara1, Tsuyoshi Goto, Hiroshi Kamiya
1Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogayaku, Yokohama, Kanagawa 240-8501, Japan.
Optics Express
|March 14, 2013
Summary
A novel hitless wavelength-selective switch (WSS) utilizing InGaAs/InAlAs multiple quantum wells (MQW) and a five-layer asymmetric coupled quantum well (FACQW) structure was successfully fabricated. This device demonstrates boxlike spectrum responses and hitless switching, a first for this technology.
Area of Science:
- Photonics
- Materials Science
- Optical Engineering
Background:
- Wavelength-selective switches (WSS) are crucial components in optical networks.
- Existing WSS technologies face challenges with spectral response and switching efficiency.
- Multiple quantum well (MQW) structures offer tunable optical properties.
Purpose of the Study:
- To propose and fabricate a novel hitless wavelength-selective switch (WSS).
- To utilize InGaAs/InAlAs MQW with a five-layer asymmetric coupled quantum well (FACQW) structure.
- To demonstrate boxlike spectrum responses and hitless switching characteristics.
Main Methods:
- Fabrication of a WSS using InGaAs/InAlAs MQW and FACQW.
- Device operation driven by electrorefractive index change via quantum-confined Stark effect (QCSE).
- Wafer growth by molecular beam epitaxy and waveguide formation by dry etching.
Main Results:
- Successful fabrication of the proposed WSS.
- Demonstration of boxlike spectrum responses for the first time.
- Successful demonstration of hitless switching characteristics for the first time.
Conclusions:
- The developed WSS based on MQW and FACQW exhibits promising performance.
- The device achieves hitless switching and desirable spectral responses.
- Further analysis of coupling efficiency effects on switching characteristics is discussed.

