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Injection locking of violet laser diodes with a 3.2 GHz offset frequency for driving Raman transitions in 43Ca+.

B C Keitch¹, N R Thomas, D M Lucas

¹Institute for Quantum Electronics, ETH Zürich, Zurich, Switzerland. bkeitch@ethz.ch

|March 19, 2013

Summary

Two violet diode lasers were successfully injection locked to a master laser, achieving a narrow linewidth of 10 Hz. This demonstrates a stable, high-power violet laser source for various applications.

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Area of Science:

Atomic, Molecular, and Optical Physics
Laser Physics and Photonics

Background:

Diode lasers offer compact and efficient light sources.
Achieving narrow linewidths and high power in violet diode lasers is challenging but crucial for applications like atom trapping and quantum information.

Purpose of the Study:

To demonstrate optical injection locking of two single-mode violet diode lasers to a master laser.
To achieve a narrow linewidth and significant output power from the slave lasers.

Main Methods:

Utilized optical injection locking to synchronize two slave diode lasers to an external-cavity master diode laser.
Employed a double-pass acousto-optic modulator to create a 3.2 GHz frequency offset between the slave lasers.
Performed optical heterodyne measurements to determine the beat note linewidth.

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Main Results:

Achieved up to 20 mW of usable output power per slave beam at room temperature.
Demonstrated a beat note linewidth of less than or equal to 10 Hz between the two slave lasers operating at a 3.2 GHz offset.
Estimated the free-running linewidth of the master laser to be approximately 3 MHz.

Conclusions:

Optical injection locking is an effective method for achieving narrow linewidths in violet diode lasers.
The developed system provides a stable, high-power, and narrow-linewidth violet laser source.
This technology has potential applications in precision spectroscopy, quantum optics, and atom manipulation.