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Atomic Force Microscopy

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The AFM Probe
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C58 on Au(111): a scanning tunneling microscopy study.

Noelia Bajales1, Stefan Schmaus, Toshio Miyamashi

  • 1Institute of Physics, Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, Germany.

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Fullerenes (C58) were deposited on gold surfaces, forming chains and 3D structures. STM imaging revealed covalent intercage bonds in C58 oligomers, indicating semiconductor properties for thick films.

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Area of Science:

  • Surface Science
  • Nanotechnology
  • Materials Science

Background:

  • Fullerenes are carbon allotropes with unique electronic and structural properties.
  • Understanding fullerene adsorption and self-assembly on surfaces is crucial for nanoscale device fabrication.
  • Gold surfaces, particularly Au(111), serve as model substrates for studying surface phenomena.

Purpose of the Study:

  • To investigate the adsorption and self-assembly of C58 fullerenes on a Au(111) surface.
  • To characterize the topographic and electronic properties of C58 deposits using scanning tunneling microscopy (STM).
  • To identify the nature of interfullerene interactions and the electronic behavior of C58 films.

Main Methods:

  • Low-energy cluster ion beam deposition of C58 fullerenes onto a room temperature Au(111) surface under ultrahigh vacuum.
  • Scanning Tunneling Microscopy (STM) for topographic imaging and local density of states (LDOS) mapping at 4.2 K.
  • Scanning Tunneling Spectroscopy (STS) to determine the electronic bandgap of C58 films.
  • Density Functional Theory (DFT) calculations for theoretical support.

Main Results:

  • At low coverages, C58 cages adsorb at defect sites and step edges on the Au(111) surface.
  • Intermediate coverages lead to the formation of C58 oligomeric chains and 2D islands, nucleated by pinned monomers.
  • High coverages result in the formation of 3D interlinked C58 cages.
  • STM and LDOS data reveal stripe-like patterns in C58 oligomers, indicative of covalent intercage bonds.
  • STS measurements on thick C58 films yield a bandgap of 1.2 eV, classifying the outermost layer as a wide band semiconductor.

Conclusions:

  • C58 fullerene adsorption on Au(111) is influenced by surface defects and leads to ordered self-assembly.
  • The observed striped patterns in STM images are a fingerprint of covalent intercage bonding in C58 oligomers.
  • The outermost layer of thick C58 films exhibits semiconductor behavior with a significant bandgap, opening possibilities for electronic applications.