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Nitrogen-doped partially reduced graphene oxide rewritable nonvolatile memory.

Sohyeon Seo1, Yeoheung Yoon, Junghyun Lee

  • 1National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea.

ACS Nano
|March 26, 2013
PubMed
Summary

Partially reduced N-doped graphene oxide (PrGODMF) exhibits stable nonvolatile memory effects. Introducing pyridinium N ions onto the graphene oxide framework enables rewritable memory characteristics, crucial for electronic devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Organic Electronics

Background:

  • Two-dimensional (2D) carbon materials like graphene oxide (GO) show promise for scalable memory devices.
  • Uncontrollable oxygen functional groups in GO limit its application in memory devices.

Purpose of the Study:

  • To develop a stable, nonvolatile memory material based on modified graphene oxide.
  • To investigate the role of pyridinium N ions in inducing stable memory effects in N-doped graphene oxide.

Main Methods:

  • Synthesis of partially reduced N-doped graphene oxide (PrGODMF) using dimethylformamide (DMF).
  • Characterization of PrGODMF's electronic and structural properties, including optical energy band gap and functional group density.
  • Evaluation of nonvolatile memory characteristics through electrical testing and analysis of voltage-driven processes.

Main Results:

  • PrGODMF demonstrated semiconducting nonvolatile memory behavior with an optical energy band gap of 1.7-2.1 eV.
  • The memory effect was directly correlated with the proportion of pyridinium N ions; reduced pyridinium N content diminished memory behavior.
  • Polarization of charged PrGODMF under an electric field induced stable, voltage-driven rewrite-read-erase-read memory effects.

Conclusions:

  • The controlled introduction of pyridinium N ions onto a partially reduced graphene oxide framework effectively stabilizes nonvolatile memory effects.
  • PrGODMF presents a promising material for rewritable nonvolatile memory applications, overcoming limitations of traditional GO-based materials.