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Related Experiment Video

Updated: May 13, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Physicochemical insight into gap openings in graphene.

Y F Zhu¹, Q Q Dai, M Zhao

¹Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130022, China.

Scientific Reports

|March 26, 2013

Summary

Disordered graphene flakes exhibit tunable bandgaps due to variations in cohesive energy, offering a new method for nanoelectronic applications.

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Published on: October 12, 2019

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene's unique electronic properties are highly sensitive to its structure and edge characteristics.
Controlling the bandgap of graphene is crucial for its application in nanoelectronics.

Purpose of the Study:

To develop a unified theoretical model for understanding bandgap openings in disordered graphene flakes.
To investigate the influence of size, geometry, and edge chemistry on the electronic structures of graphene nanostructures.

Main Methods:

Development of a size-dependent cohesive energy formula for two-dimensional materials.
Application of density functional theory (DFT) to analyze electronic structures.
Validation of theoretical predictions against experimental data.

Main Results:

A unified model explains bandgap openings in disordered graphene flakes (quantum dots, nanoribbons, nanoporous sheets).
Bandgap modulation is primarily governed by cohesive energy variations in carbon atoms, influenced by edge physicochemical properties.
Disordered flakes show monotonous bandgap changes with size, dependent on dimension, shape, and edge saturation.

Conclusions:

Edge disorder significantly alters the electronic structures of graphene flakes compared to ideal ones.
The study provides a quantitative method for modulating graphene's bandgap for nanoelectronic devices.
Theoretical predictions are supported by experimental evidence, highlighting the model's validity.