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Updated: May 13, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Broken symmetry quantum Hall states in dual-gated ABA trilayer graphene
Yongjin Lee1, Jairo Velasco, David Tran
1Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, United States.
Abstract:
ABA-stacked trilayer graphene is a unique 2D electron system with mirror reflection symmetry and unconventional quantum Hall effect. We present low-temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν = -8, -2, 2, 6, and 10, which is in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd-integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Landau level (LL). Under an out-of-plane electric field E(perpendicular), we observe degeneracy breaking and transitions between QH plateaus. Interestingly, depending on its direction, E(perpendicular) selectively breaks the LL degeneracies in the electron-doped or hole-doped regimes. Our results underscore the rich interaction-induced phenomena in trilayer graphene.
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