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Updated: May 12, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

A Di Bartolomeo1, F Giubileo, L Iemmo

  • 1Dipartimento di Fisica E R Caianiello and Centro Interdipartimentale NANO_MATES, Università degli Studi di Salerno, via Ponte don Melillo, I-84084, Fisciano (Sa), Italy.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|March 27, 2013
PubMed

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