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SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography.

Mohammad Ali Mohammad1, Steven K Dew, Maria Stepanova

  • 1Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, T6G 2V4, Canada. M.A.Mohammad@ualberta.net.

Nanoscale Research Letters
|March 28, 2013
PubMed
Summary

This study details SML electron beam resist for high-aspect-ratio nanopatterning. The SML resist, when developed with IPA/water, shows high sensitivity and excellent pattern transfer, outperforming PMMA.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Lithography

Background:

  • Electron beam lithography is crucial for nanoscale fabrication.
  • Developing high-sensitivity resists is essential for efficient nanopatterning.
  • SML resist offers potential for advanced lithographic applications.

Purpose of the Study:

  • To characterize the process for SML electron beam resist.
  • To evaluate SML resist's performance in high-aspect-ratio nanopatterning.
  • To compare SML resist with benchmark materials like PMMA.

Main Methods:

  • Process characterization of SML resist using various developers.
  • Generation of SML contrast curves.
  • Exposure and ultrasonic development using IPA/water.
  • Demonstration of lift-off features.

Main Results:

  • SML resist sensitivity was significantly improved using IPA/water developer.
  • Achieved an aspect ratio of 9:1 in 50-nm half-pitch gratings, exceeding PMMA performance.
  • Demonstrated successful 25-nm lift-off features, indicating good pattern transfer.

Conclusions:

  • SML resist, particularly with IPA/water development, offers high sensitivity and aspect ratio performance.
  • SML resist is a promising alternative to PMMA for high-resolution nanopatterning.
  • The study validates SML resist's potential for advanced microelectronic fabrication.