Related Experiment Video
Updated: May 12, 2026

High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal
Published on: October 31, 2019
Visible light initiated and collapsed resistive switching in TbMnO3/Nb:SrTiO3 heterojunctions
Yimin Cui1, Wei Liu, Rongming Wang
1Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Department of Physics, Beihang University, Beijing 100191, China. cuiym@buaa.edu.cn
Abstract:
Simple oxide heterostructures have been fabricated by depositing TbMnO3 thin films on Nb:SrTiO3 substrates at different temperatures. Remarkable switching with an on/off resistance ratio of ~5000 is found in the sample grown at 720 °C, while only tiny resistive hysteresis can be observed in the sample grown at 650 °C. A jump switching in the I-V loop at the lower resistance state with negative bias is initiated by a visible light pulse in the sample grown at 650 °C, whereas a drop switching can be observed in the sample grown at 720 °C. A trapping-detrapping process along the TbMnO3/Nb:SrTiO3 interfaces is proposed to explain the anomalous photoresponse.
Related Concept Videos
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barrier Diode

