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Updated: May 12, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Strain induced bandgap and refractive index variation of silicon

Jingnan Cai1, Yasuhiko Ishikawa, Kazumi Wada

  • 1Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo,113-8656, Japan. cai@microphotonics.t.u-tokyo.ac.jp

Optics Express
|April 3, 2013
PubMed

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