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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...

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Related Experiment Video

Updated: May 12, 2026

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

Plasmonically enhanced hot electron based photovoltaic device.

Fatih B Atar1, Enes Battal, Levent E Aygun

  • 1Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800, Turkey. fbatar@ee.bilkent.edu.tr

Optics Express
|April 3, 2013
PubMed
Summary
This summary is machine-generated.

Hot electron photovoltaics offer a path to low-cost, ultra-thin solar cells. By integrating plasmonic structures with tunneling junctions, researchers achieved a significant boost in device efficiency and current.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Renewable Energy

Background:

  • Hot electron photovoltaics are a promising technology for next-generation solar cells due to their potential for low cost and thin form factors.
  • Plasmonics offers a viable route to enhance the efficiency of photovoltaic devices by manipulating light-matter interactions.

Purpose of the Study:

  • To investigate the integration of plasmonic structures with metal-insulator-metal (MIM) tunneling junctions for enhanced hot electron photovoltaic performance.
  • To explore the design flexibility offered by separately fabricating the plasmonic and tunneling MIM components.

Main Methods:

  • Fabrication of a stacked device architecture comprising a plasmon-exciting MIM structure and a separate tunneling MIM junction.
  • Characterization of the device performance, focusing on short-circuit current enhancement at plasmon resonance wavelengths.

Main Results:

  • Demonstrated a significant enhancement, close to one order of magnitude, in the short-circuit current.
  • Observed the enhancement at specific resonance wavelengths corresponding to the plasmonic structure's design.
  • The separate fabrication approach allowed for independent optimization of plasmonic and tunneling functionalities.

Conclusions:

  • The integrated plasmonic-MIM approach is effective in boosting hot electron photovoltaic efficiency.
  • This modular design strategy provides flexibility for optimizing both light harvesting and charge extraction.
  • Further development holds potential for realizing highly efficient, low-cost, and ultra-thin solar cells.