Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Topic Modeling of Nursing Documentation in Hemodialysis Units: A Mixed-Methods Study of Nursing Surveillance Activities.

Journal of nursing management·2026
Same author

Defect Characterization of the SiO<sub>2</sub>/Si Interface Investigated by Drift-Assisted Positron Annihilation Lifetime Spectroscopy.

Nanomaterials (Basel, Switzerland)·2026
Same author

Toward All 2D-Based Printed Raindrop Triboelectric Nanogenerators.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Saturable absorber mirrors based on layered platinum diselenide.

Optics express·2025
Same author

Self-Applicable Thermostable Heterogeneous Microneedle Patch for Recombinant Protein Vaccination against Botulinum Neurotoxin Serotype A.

ACS applied materials & interfaces·2025
Same author

GPR43 in eosinophils suppresses the emergence of pathogenic Siglec-F<sup>hi</sup> neutrophils in allergic airway inflammation in mice.

Nature communications·2025
Same journal

Higher-Order Clustering of Receptors Real-Time Projected by Plasmon-ruler on the Single Live Cell.

Nano letters·2026
Same journal

Achieving Fermi-Level Depinning and Ideal Metal Contact in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Devices via MXene Integration.

Nano letters·2026
Same journal

AI-Assisted Electron Microscopy in Structure-Performance Analysis of Advanced Catalysts: From Atomic Resolution to Statistical Significance.

Nano letters·2026
Same journal

Electrically Switchable Ultraslow Dispersionless Polaritons via Twist Engineering in van der Waals Heterostructures.

Nano letters·2026
Same journal

Correction to "Ultrasonication-Triggered Ubiquitous Assembly of Magnetic Janus Amphiphilic Nanoparticles in Cancer Theranostic Applications".

Nano letters·2026
Same journal

Tunable Proximity Valley Splitting Via Interfacial Exchange Pinning in WSe<sub>2</sub>-CrBr<sub>3</sub>-CrPS<sub>4</sub> Heterostructures.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: May 12, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Chemically modulated graphene diodes.

Hye-Young Kim1, Kangho Lee, Niall McEvoy

  • 1Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland.

Nano Letters
|April 4, 2013
PubMed
Summary
This summary is machine-generated.

We developed new graphene diode sensors (GDS) using monolayer graphene on silicon for detecting liquids and gases. These stable and reliable sensors show potential for environmental and biocompatible applications.

More Related Videos

Development of a 3D Graphene Electrode Dielectrophoretic Device
11:15

Development of a 3D Graphene Electrode Dielectrophoretic Device

Published on: June 22, 2014

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Related Experiment Videos

Last Updated: May 12, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Development of a 3D Graphene Electrode Dielectrophoretic Device
11:15

Development of a 3D Graphene Electrode Dielectrophoretic Device

Published on: June 22, 2014

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Area of Science:

  • Materials Science
  • Nanotechnology
  • Sensor Technology

Background:

  • Graphene's unique electronic properties make it suitable for sensing applications.
  • Developing reliable and stable sensor platforms is crucial for environmental and biomedical monitoring.

Purpose of the Study:

  • To report the manufacture of novel graphene diode sensors (GDS).
  • To demonstrate the GDS's capability for investigating and tuning extrinsic doping of graphene.
  • To establish the GDS as a viable platform for various sensing applications.

Main Methods:

  • Fabrication of GDS using monolayer graphene on silicon substrates.
  • Exposure of GDS to liquids and gases to observe parameter changes.
  • Correlating diode parameter changes with charge transfer from adsorbates.

Main Results:

  • Successful manufacture of graphene diode sensors (GDS).
  • Demonstrated correlation between diode parameters and adsorbate charge transfer.
  • Exhibited reliable investigation and tuning of extrinsic graphene doping.
  • Showcased excellent recovery and long-term stability.

Conclusions:

  • GDS offer a reliable method for tuning graphene's extrinsic doping.
  • The demonstrated stability and recovery qualify GDS as a new sensor platform.
  • GDS are suitable for gas, environmental, and biocompatible sensing applications.