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Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron
Ashley L Gibb1, Nasim Alem, Jian-Hao Chen
1Department of Chemistry, University of California, Berkeley, California 94720, United States.
Abstract:
Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.
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