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Updated: May 12, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Quantum engineering at the silicon surface using dangling bonds.

S R Schofield¹, P Studer, C F Hirjibehedin

¹London Centre for Nanotechnology, University College London, London WC1H 0AH, UK. s.schofield@ucl.ac.uk

Nature Communications

|April 5, 2013

Summary

This summary is machine-generated.

Researchers created artificial quantum states on silicon using a scanning tunnelling microscope. This breakthrough enables precise fabrication of atomic-scale defects for quantum information processing applications.

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Area of Science:

Quantum physics
Materials science
Nanotechnology

Background:

Individual atoms and ions are routinely manipulated for quantum state creation.
Deterministic fabrication of multiple atomic-scale defects in semiconductors is crucial for quantum information processing.

Purpose of the Study:

To fabricate interacting chains of dangling bond defects on a silicon surface.
To image the ground-state and excited-state probability distributions of artificial molecular orbitals.

Main Methods:

Utilized a scanning tunnelling microscope (STM) to create defects on a hydrogen-passivated silicon (001) surface.
Employed STM tip bias and tip-sample separation as gates to control imaging of specific quantum states.

Main Results:

Successfully fabricated interacting chains of dangling bond defects.
Imaged both ground-state and excited-state probability distributions of artificial molecular orbitals.
Demonstrated atomically precise quantum state fabrication on silicon.

Conclusions:

Atomically precise quantum states can be fabricated on silicon surfaces.
A general model for quantum-state fabrication on other passivated semiconductor surfaces is suggested, relying on STM-based single-atom depassivation.