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Quantum interference and Aharonov-Bohm oscillations in topological insulators.

Jens H Bardarson1, Joel E Moore

  • 1Department of Physics, University of California, Berkeley, CA 94720, USA.

Reports on Progress in Physics. Physical Society (Great Britain)
|April 5, 2013
PubMed
Summary

Topological insulators (TIs) possess unique metallic surface states described by Dirac cones. This review explores quantum transport phenomena, like weak anti-localization, to experimentally verify these Dirac states in 3D TIs.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Topological insulators (TIs) exhibit insulating bulk and conductive surface states.
  • The surface electronic structure of 3D TIs is characterized by a 2D Dirac cone, arising from bulk topological properties.
  • These surface states share similarities with graphene but possess distinct magnetic field responses.

Purpose of the Study:

  • To provide an overview of quantum transport properties of TI surfaces.
  • To focus on experimental verification of the Dirac nature of TI surface states using quantum interference phenomena.
  • To review recent experimental advancements in the field.

Main Methods:

  • Theoretical analysis of quantum transport phenomena.
  • Experimental investigation using quantum interference effects (e.g., weak anti-localization, Aharonov-Bohm effect).
  • Focus on transport experiments to probe surface state properties.

Main Results:

  • Quantum interference phenomena offer a pathway to verify the Dirac nature of TI surface states.
  • Experimental evidence supports the unique transport characteristics of these topological surface states.
  • The review surveys key theoretical predictions and recent experimental findings.

Conclusions:

  • Quantum transport measurements are crucial for understanding and confirming the exotic Dirac fermions on TI surfaces.
  • The interplay between bulk topology and surface states defines their unique electronic properties.
  • Continued research in this area promises advancements in novel electronic devices.