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Updated: May 12, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures
1Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic. endres.jan@gmail.com
Abstract:
We present a generalization of the Dodson-Tsao kinematic model of misfit dislocation for graded SixGe1-x/Si(001) layers. The layers were prepared under different growing conditions (temperature). The misfit dislocation distribution has been determined by means of high-resolution x-ray scattering. Analysis of the reciprocal space maps was compared with the kinematic Dodson-Tsao model and the equilibrium Tersoff model.

