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Published on: December 5, 2015
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium
Hui Fang1, Mahmut Tosun, Gyungseon Seol
1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
Abstract:
We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13) cm(-2) and 2.5 × 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low contact resistances. Uniquely, WSe2 n-FETs are reported for the first time, exhibiting an electron mobility of ~110 cm(2)/V·s, which is comparable to the hole mobility of previously reported p-FETs using the same material. Ab initio simulations were performed to understand K doping of MoS2 and WSe2 in comparison with graphene. The results here demonstrate the need of degenerate doping of few-layer chalcogenides to improve the contact resistances and further realize high performance and complementary channel electronics.
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