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The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry
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Efficient source and mask optimization with augmented Lagrangian methods in optical lithography.

Jia Li1, Shiyuan Liu, Edmund Y Lam

  • 1Imaging Systems Laboratory, Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China.

Optics Express
|April 11, 2013
PubMed
Summary
This summary is machine-generated.

A new augmented Lagrangian method (ALM) accelerates source mask optimization (SMO) for optical lithography. This fast algorithm enhances pattern fidelity and process stability for advanced semiconductor manufacturing.

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Area of Science:

  • Computational lithography
  • Semiconductor manufacturing processes
  • Numerical optimization techniques

Background:

  • Source mask optimization (SMO) is crucial for process stability in advanced optical lithography (22 nm and beyond).
  • Existing SMO algorithms are computationally intensive due to nonlinear optimization challenges.

Purpose of the Study:

  • To develop a fast algorithm for solving source mask optimization (SMO) problems.
  • To improve computational efficiency and convergence speed for SMO.
  • To enhance pattern fidelity and process stability in optical lithography.

Main Methods:

  • Developed a novel algorithm based on augmented Lagrangian methods (ALMs) for SMO.
  • Utilized variable splitting to convert the optimization problem into a constrained form.
  • Employed alternating minimization and quasi-Newton methods for efficient sub-problem solving and accelerated convergence.

Main Results:

  • The proposed ALM-based algorithm significantly accelerates SMO convergence.
  • Demonstrated improved pattern fidelity compared to existing methods.
  • The method provides a straightforward implementation for practical application.

Conclusions:

  • The fast ALM algorithm offers an effective solution for computationally intensive SMO problems.
  • This approach enhances process stability and pattern fidelity in advanced optical lithography.
  • The developed method contributes to overcoming challenges in next-generation semiconductor manufacturing.