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Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass
Evgeny Tatarov1, Thomas Reichert, Tobat P I Saragi
1Macromolecular Chemistry and Molecular Materials, Institute of Chemistry, Department of Mathematics and Science and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, D 34132 Kassel, Germany.
Abstract:
The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%), while a magnetic-field induced resistance decrease (negative MR up to -6.5%) can be achieved under illumination.
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