Related Experiment Video
Updated: May 12, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron
Min Wang1, Sung Kyu Jang, Won-Jun Jang
1SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
Abstract:
Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.
