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Updated: May 12, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Asymmetric magnetoconductance and magneto-Coulomb effect in a carbon nanotube single electron transistor
Joon Sung Lee1, Jong-Wan Park, Jae Yong Song
1Korea Research Institute of Standards and Science, Daejeon, Republic of Korea.
Abstract:
We report single step-like asymmetric magnetoconductance from a double-walled carbon nanotube single electron transistor contacted by ferromagnetic cobalt electrodes. The device conductance changed significantly when the direction of the applied magnetic field was reversed, but did not show the spin-valve-type double extrema feature near the coercive field of the electrodes. The magnetoconductance also showed quasi-periodic sign-reversing oscillations with respect to the applied bias. The bias-dependent oscillation of the magnetoconductance was compared with the quantum dot stability diagram for the device. As a result, it was confirmed that the asymmetric magnetoconductance was caused by the magneto-Coulomb effect.
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