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Updated: May 12, 2026
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Spectroscopic, diode-pumped laser properties and gamma irradiation effect on Yb, Er, Ho:GYSGG crystals
Jiakang Chen1, Dunlu Sun, Jianqiao Luo
1The Key Laboratory of Photonic Devices and Materials, Anhui Province, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China.
Abstract:
We demonstrate a diode end-pumped Yb, Er, Ho:Gd(1.17)Y(1.83)Sc(2)Ga(3)O(12) (GYSGG) laser operated at 2.79 μm in continuous-wave mode. Spectral analysis shows that Yb(3+) and Ho(3+) act as sensitizer and deactivator ions, respectively. Pumping with a 967 nm laser diode produces the maximum output power of 411 mW, corresponding to optical-optical conversion and slope efficiencies of 11.6% and 13.1%, respectively. The minimum laser threshold is only 81 mW because of Ho(3+) doping. The laser properties are only slightly influenced by 100 mrad gamma irradiation. The Yb, Er, Ho:GYSGG crystal possesses excellent radiation resistance and is a potential laser gain medium in radiant environments.
