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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Cross-type spectrum rearrangement in graphene with weakly bound impurity centres: an impurity band with anomalous

Yuriy V Skrypnyk1, Vadim M Loktev

  • 1G V Kurdyumov Institute of Metal Physics, National Academy of Sciences of Ukraine, Kyiv 03680, Ukraine. yuriy.v.skrypnyk@gmail.com

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|April 23, 2013
PubMed

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