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Updated: May 12, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Strain- and electric field-induced band gap modulation in nitride nanomembranes
Rodrigo G Amorim1, Xiaoliang Zhong, Saikat Mukhopadhyay
1Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Abstract:
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts.
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