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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Nanowire-based field effect transistors for terahertz detection and imaging systems
1NEST, Scuola Normale Superiore and CNR-Istituto Nanoscienze, Piazza San Silvestro 12, I-56127 Pisa, Italy. lorenzo.romeo@sns.it
Nanotechnology
|April 27, 2013
Summary
Researchers developed highly sensitive terahertz (THz) detectors using semiconductor nanowire (NW) field-effect transistors (FETs). These room-temperature devices show promise for advanced electronic and photonic applications.
Area of Science:
- Semiconductor Nanotechnology
- Terahertz (THz) Photonics
- Advanced Electronic Devices
Background:
- Self-assembled nanostructures enable advanced semiconductor devices for electronics and photonics.
- Terahertz (THz) technology requires sensitive and reliable detection methods.
Purpose of the Study:
- To develop highly-sensitive, room-temperature terahertz (THz) detectors.
- To investigate the performance of field-effect transistors (FETs) based on semiconductor nanowires (NWs) for THz detection.
Main Methods:
- Fabrication of field-effect transistors (FETs) using semiconductor nanowires (NWs).
- Utilizing a broadband bow-tie antenna to focus 0.3 THz radiation onto FET source and gate electrodes.
- Investigating the effect of Selenium (Se) doping concentration in Indium Arsenide (InAs) NWs on detection performance.
Main Results:
- Achieved high responsivity values exceeding 100 V W⁻¹.
- Demonstrated a noise-equivalent-power of approximately 10⁻⁹ W Hz(⁻½).
- Confirmed device reliability and sensitivity through 0.3 THz transmission imaging experiments.
Conclusions:
- Semiconductor nanowire (NW) field-effect transistors (FETs) are effective as broadband terahertz (THz) detectors.
- Device performance is influenced by Se-doping concentration in InAs NWs.
- These detectors show practical utility and high sensitivity for THz applications.
