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Published on: May 11, 2019
Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by
Subramanian Balamurali1, Rathinam Chandramohan, Marimuthu Karunakaran
1Department of Physics, Manonmaniam Sundaranar University, Tirunelveli 627 012, Tamil Nadu, India.
Abstract:
Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications.
