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Related Experiment Video

Updated: May 11, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

State conversion based on terahertz plasmonics with vanadium dioxide coating controlled by optical pumping.

Fei Fan1, Wen-Hao Gu, Sai Chen

  • 1Institute of Modern Optics, Nankai University, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Tianjin 300071, China.

Optics Letters
|May 2, 2013
PubMed
Summary
This summary is machine-generated.

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Researchers demonstrated a novel plasmonic device for terahertz (THz) wave modulation. This vanadium dioxide (VO2) coated silicon column array enables state conversion for advanced THz applications.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Plasmonic devices offer unique light-matter interactions.
  • Vanadium dioxide (VO2) exhibits a crucial insulator-metal transition (IMT).
  • Photonic crystals (PCs) provide tailored light manipulation.

Purpose of the Study:

  • To demonstrate state conversion and terahertz (THz) wave modulation using a novel plasmonic device.
  • To investigate the effect of VO2's insulator-metal transition on device performance.
  • To explore potential THz applications of the developed device.

Main Methods:

  • Fabrication of a plasmonic device using silicon column arrays coated with VO2.
  • Experimental demonstration of state conversion under double 45° tilted optical pumping.

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Last Updated: May 11, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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  • Investigation of state conversion under normally incident optical pumping.
  • Main Results:

    • Achieved state conversion from dielectric to metallic photonic crystal (PC) due to VO2's IMT.
    • Demonstrated broadband intensity modulation with 70% modulation depth.
    • Observed state conversion from dielectric PC to a plasmonic device with partial VO2 IMT, leading to plasmonic resonances.

    Conclusions:

    • The developed plasmonic device enables efficient THz wave modulation through controlled state conversion.
    • The device's performance is directly linked to the insulator-metal transition of VO2.
    • This technology holds significant promise for future terahertz applications.