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Temperature-dependent electron mobility in InAs nanowires.

Nupur Gupta¹, Yipu Song, Gregory W Holloway

¹Department of Physics and Astronomy, University of Waterloo, 200 University Avenue W., Waterloo, ON, Canada.

|May 2, 2013

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Electron mobility in Indium Arsenide (InAs) nanowire field-effect transistors was measured. Mobility increases with temperature up to 50 K, then decreases, explained by surface state scattering and nanoscale confinement effects.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Indium Arsenide (InAs) nanowires are promising for electronic devices.
Understanding electron transport in nanowires is crucial for device performance.
Surface states significantly influence carrier mobility in low-dimensional systems.

Purpose of the Study:

To investigate the temperature dependence of electron mobility in InAs nanowire field-effect transistors (FETs).
To elucidate the scattering mechanisms limiting electron mobility.
To correlate transport measurements with theoretical models.

Main Methods:

Transport measurements on InAs nanowire FETs from 10 K to 200 K.
Analysis of mobility behavior with varying temperature.

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Finite-element simulations for scattering rate calculations.

Main Results:

Electron mobility increases with temperature below ~30-50 K and decreases above this range.
Observed mobility is explained by Coulomb scattering from ionized surface states.
Thermally activated scatterers and nanoscale confinement effects (interband scattering) influence mobility at higher temperatures.

Conclusions:

Coulomb scattering from surface states is the dominant mechanism limiting InAs nanowire mobility.
Nanoscale confinement and subband population contribute to mobility variations at higher temperatures.
The study provides a comprehensive understanding of electron transport in InAs nanowires, crucial for device design.