Related Experiment Video

Updated: May 11, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Effect of the Pt buffer layer on perpendicular exchange bias based on collinear/non-collinear coupling in a

T Ashida, Y Sato, T Nozaki

    Journal of Applied Physics
    |May 2, 2013
    PubMed

    More Related Videos

    Fabrication of Spatially Confined Complex Oxides08:45

    Fabrication of Spatially Confined Complex Oxides

    Published on: July 1, 2013

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    Related Concept Videos

    Crystal Field Theory - Octahedral Complexes02:58

    Crystal Field Theory - Octahedral Complexes

    Crystal Field Theory
    To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
    CFT focuses on...
    Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

    Crystal Field Theory - Tetrahedral and Square Planar Complexes

    Tetrahedral Complexes
    Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
    The Electrical Double Layer01:30

    The Electrical Double Layer

    In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
    Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

    Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)

    Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
    The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...
    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...