Related Experiment Video
Updated: May 11, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Orientation-dependent electronic structures and charge transport mechanisms in ultrathin polymeric n-channel
Simone Fabiano1, Hiroyuki Yoshida, Zhihua Chen
1Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands.
Abstract:
We investigated the role of metal/organic semiconductor interface morphology on the charge transport mechanisms and energy level alignment of the n-channel semiconductor poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2ODT2)). Variable-temperature study of well-ordered edge-on-oriented P(NDI2OD-T2) monolayer and multilayer field-effect transistors fabricated via Langmuir-Schäfer (LS) method reveals a higher activation energy for the edge-on morphology when compared to that extracted for the face-on oriented P(NDI2OD-T2) spin-coated films, which showed a weaker temperature dependence. Near-ultraviolet inverse photoemission and low-energy electron transmission spectroscopies are utilized to study these microstructurally defined polymeric films. The cross correlations of these techniques with the device characterization reveals the role of the molecular orientation at the semiconductor/contact interface in shifting the charge injection barrier. Finally, we demonstrate that the injection barrier for electrons is higher for the LS/edge-on than in the spin-coated/face-on films.
Related Concept Videos
Field Effect Transistor
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
P-N junction
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
