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Updated: May 11, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires
David Lindgren1, Kenichi Kawaguchi, Magnus Heurlin
1Lund University, Solid State Physics and the Nanometer structure consortium, Box 118, SE-221 00, Lund, Sweden. david.lindgren@ftf.lth.se
Abstract:
Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging.
