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Updated: May 11, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Insights into the interfacial properties of low-voltage CuPc field-effect transistor
Yaorong Su1, Ming Ouyang, Pengyi Liu
1Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China.
Abstract:
The interfacial transport properties and density of states (DOS) of CuPc near the dielectric surface in an operating organic field-effect transistor (OFET) are investigated using Kelvin probe force microscopy. We find that the carrier mobility of CuPc on high-k Al2Oy/TiOx (ATO) dielectrics under a channel electrical field of 4.3 × 10(2) V/cm reaches 20 times as large as that of CuPc on SiO2. The DOS of the highest occupied molecular orbital (HOMO) of CuPc on the ATO substrate has a Gaussian width of 0.33 ± 0.02 eV, and the traps DOS in the gap of CuPc on the ATO substrate is as small as 7 × 10(17) cm(-3). A gap state near the HOMO edge is observed and assigned to the doping level of oxygen. The measured HOMO DOS of CuPc on SiO2 decreases abruptly near E(V(GS) = V(T)), and the pinning of DOS is observed, suggesting a higher trap DOS of 10(19)-10(20) cm(-3) at the interface. The relationships between DOS and the structural, chemical, as well as electrical properties at the interface are discussed. The superior performance of CuPc/ATO OFET is attributed to the low trap DOS and doping effect.
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