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Universal electric-field-driven resistive transition in narrow-gap Mott insulators

Pablo Stoliar1, Laurent Cario, Etiene Janod

  • 1Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France. pablo-alberto.stoliar@u-psud.fr

Advanced Materials (Deerfield Beach, Fla.)
|May 8, 2013
PubMed
Summary

Universality in electric-field-driven resistive switching was observed in Mott systems. A new model explains this phenomenon as a dynamically directed avalanche, with verified accumulation and relaxation times.

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