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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: May 11, 2026

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells
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Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells

Published on: July 19, 2019

Cd-free CIGS solar cells with buffer layer based on the In2S3 derivatives.

Kihwan Kim1, Liudmila Larina, Jae Ho Yun

  • 1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejon, Korea.

Physical Chemistry Chemical Physics : PCCP
|May 10, 2013
PubMed
Summary

This study investigated carrier loss in CIGS solar cells using In2S3 buffer layers. Optimizing the TCO/buffer interface improved efficiency to 13.0%, identifying it as key for high-quality junctions.

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In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells
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In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

Published on: October 3, 2018

Area of Science:

  • Materials Science
  • Renewable Energy
  • Semiconductor Physics

Background:

  • Copper Indium Gallium Selenide (CIGS) solar cells are promising for renewable energy.
  • Cd-free buffer layers are sought to replace Cadmium Sulfide (CdS).
  • Indium Sulfide (In2S3) derivatives offer a potential Cd-free alternative.

Purpose of the Study:

  • To identify reasons for photo-generated carrier loss in CIGS solar cells with In2S3-based buffer layers.
  • To improve charge collection and device efficiency by optimizing buffer layers and interfaces.
  • To understand the impact of the TCO/buffer interface on device performance.

Main Methods:

  • Fabrication of CIGS solar cells using chemical bath deposited Inx(OOH,S)y buffer layers.
  • Device characterization including spectral response and voltage-dependent carrier collection.
  • Comparative analysis of different device configurations, including varying buffer layer stacks and TCO/buffer interfaces.

Main Results:

  • Inx(OOH,S)y buffers showed voltage-dependent carrier collection and spectral response limitations.
  • Employing a wider bandgap CIGS absorber (Eg = 1.30 eV) with Inx(OOH,S)y improved performance, reaching 9.3% efficiency.
  • A 13.0% efficient CIGS cell was achieved with an n-ZnO/i-ZnO/CdS/Inx(OOH,S)y configuration, indicating the i-ZnO/Inx(OOH,S)y interface is critical.

Conclusions:

  • The i-ZnO/Inx(OOH,S)y interface significantly impacts CIGS solar cell efficiency.
  • Further optimization of interface properties is necessary for high-quality p-n junctions.
  • CBD In2S3 buffer layers show potential for Cd-free CIGS solar cells, but interface engineering is crucial.