Related Experiment Video

Updated: May 11, 2026

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
07:10

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

Published on: April 29, 2020

Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning

Thorsten Mehrtens1, Knut Müller, Marco Schowalter

  • 1Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany. mehrtens@ifp.uni-bremen.de

Ultramicroscopy
|May 14, 2013
PubMed

Keywords:
CELFAComposition analysisHAADF-STEMInGaAsSegregation

More Related Videos

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries09:51

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Published on: April 22, 2013

Related Concept Videos

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...