Growth of vertical GaAs nanowires on an amorphous substrate via a fiber-textured Si platform
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Published on: July 21, 2023
Yann Cohin1, Olivia Mauguin, Ludovic Largeau
1CNRS-Laboratoire de Photonique et de Nanostructures, Route de Nozay, F-91460 Marcoussis, France. yann.cohin@saint-gobain.com
Abstract:
We demonstrate the vertical self-catalyzed molecular beam epitaxy (MBE) growth of GaAs nanowires on an amorphous SiO2 substrate by using a smooth [111] fiber-textured silicon thin film with very large grains, fabricated by aluminum-induced crystallization. This generic platform paves the way to the use of inexpensive substrates for the fabrication of dense ensembles of vertically standing nanowires (NWs) with promising perspectives for the integration of NWs in devices.
