Direct laser writing of three-dimensional narrow bandgap and high refractive-index PbSe structures in a solution

Three-dimensional (3D) micro/nano structures made of narrow electronic bandgap semiconductor materials have important applications in a wide range of disciplines. Direct laser writing (DLW) provides the unparalleled advantage to fabricate 3D arbitrary geometric structures at the micro and nano meter scale. The fabrication of 3D structures within bulk narrow electronic bandgap semiconductor materials by DLW is challenged for the top-down strategy due to their narrow bandgap and high refractive index. Here, we report on the bottom-up strategy for the fabrication of 3D micro/nano structures made from PbSe with an electronic bandgap as narrow as 0.27 eV and a refractive index as high as 4.82 in a solution.