Related Experiment Video
Updated: May 11, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Stability and energetics of Bursian diodes
1Department of Mathematics, UCLA, Los Angeles, California 90095, USA. msr35@math.ucla.edu
Abstract:
We present an analysis of the stability, energy, and torque properties of a model Bursian diode in a one dimensional Eulerian framework using the cold Euler-Poisson fluid equations. In regions of parameter space where there are two sets of equilibrium solutions for the same boundary conditions, one solution is found to be stable and the other unstable to linear perturbations. Following the linearly unstable solutions into the nonlinear regime, we find they relax to the stable equilibrium. A description of this process in terms of kinetic, potential and boundary-flux energies is given, and the relation to a Hamiltonian formulation is commented on. A nonlocal torque integral theorem relating the prescribed boundary data to the average current in the domain is also provided. The results will be useful for numerical verification purposes, and understanding Bursian diodes in general.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Diode: Forward bias
The behavior of a diode in forward bias...
Modeling of Diode Reverse Characteristics
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
Schottky Barrier Diode
Diode: Reverse bias

