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Updated: May 11, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors
Wei Xie1, Kristin Willa, Yanfei Wu
1Department of Chemical Engineering and Materials Science, 421 Washington Ave SE, Minneapolis, MN 55455, USA.
Abstract:
The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm(2) V(-1) s(-1) . Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.
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Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Transport Number
P-N junction

