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Published on: June 18, 2013
Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical
Xueyu Liu1, Pengbo Liu, Hui Huang
1Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China.
Abstract:
InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.
