NaBa2Cu3S5: a doped p-type degenerate semiconductor
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Updated: May 10, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Mihai Sturza1, Fei Han, Daniel P Shoemaker
1Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States.
Abstract:
Mixed S(2-/)S(1-) oxidation states have been discovered in the new quaternary compound NaBa2Cu3S5. Synthesized from the reaction of Cu in a molten alkali metal/polysulfide flux, the compound crystallizes in monoclinic space group C2/m with a = 16.5363(7) Å, b = 5.5374(5) Å, c = 10.3717(10) Å, β = 98.535(8)°. The Na(+) Ba2(+2) [Cu(+)3S3](3-)S2(2-) crystal structure contains layers of edge sharing CuS4 tetrahedra and sheets of S2(2-) dimers. These layers are separated by mixed Ba/Na cation layers. The conductivity of the single crystals of NaBa2Cu3S5 is ∼450 S cm(-1) at room temperature, and increasing conductivity with decreasing temperature is observed, indicating metallic behavior despite the optical band gap of 0.45 eV. A small positive thermopower (45-55 μV K(-1) from 300 K to 500 K) and Hall effect measurements also confirm p-type conductivity with carrier concentration at 200 K of ∼1.6 × 10(21) cm(-3) and a hole mobility of ∼2 cm(2) V(-1) s(-1). NaBa2Cu3S5 exhibits temperature-independent Pauli paramagnetism.
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