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Updated: May 10, 2026

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing
Published on: March 22, 2019
Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm
1Photonics Research Group, Department of Information Technology, Ghent University - IMEC, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium.
Abstract:
The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm is reported. The devices are fabricated on 200 mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5 dB) and good crosstalk characteristics (15-20 dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6 dB/cm.
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