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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer

Yong-Seok Choi1, Jang-Won Kang, Byeong-Hyeok Kim

  • 1School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.

Optics Express
|June 6, 2013
PubMed

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