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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
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50-Gb/s ring-resonator-based silicon modulator.

Takeshi Baba1, Suguru Akiyama, Masahiko Imai

  • 1Photonics Electronics Technology Research Association, Japan. t-baba@petra-jp.org

Optics Express
|June 6, 2013
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Summary

This study demonstrates the first 50 Gb/s operation of a silicon ring resonator modulator. It utilizes a novel pin-diode phase shifter for efficient, low-voltage performance in optical communications.

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Area of Science:

  • Photonics
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Silicon photonics is crucial for high-speed optical communication.
  • Ring resonator modulators offer compact and efficient optical modulation.
  • Achieving higher data rates requires improved modulator performance.

Purpose of the Study:

  • To demonstrate 50 Gb/s operation in a ring-resonator-based silicon modulator.
  • To investigate the performance of a novel pin-diode phase shifter.
  • To reduce driving voltage and insertion loss for high-speed applications.

Main Methods:

  • Integration of a pin-diode phase shifter with a side-wall-grating waveguide into a ring resonator.
  • Operation in a forward-biased mode.
  • Characterization of V(π)L, driving voltage, and optical insertion loss at 50 Gb/s.

Main Results:

  • First-time achievement of 50 Gb/s operation for a ring-resonator silicon modulator.
  • A low V(π)L of 0.28 V·cm at 25 GHz was achieved.
  • A driving voltage of 1.96 V(pp) and an optical insertion loss of 5.2 dB were recorded at 50 Gb/s.

Conclusions:

  • The developed silicon ring resonator modulator successfully achieved 50 Gb/s operation.
  • The pin-diode phase shifter enables efficient modulation with low driving voltage.
  • This technology holds promise for next-generation high-speed optical interconnects.