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ASE and parasitic lasing in thin disk laser with anti-ASE cap
Hiroaki Furuse1, Haik Chosrowjan, Junji Kawanaka
1Institute for Laser Technology, Suita, Osaka, Japan. furuse-h@ile.osaka-u.ac.jp
Abstract:
The amplified spontaneous emission (ASE) and parasitic lasing (PL) effects in thin disk laser with an anti-ASE cap have been investigated in detail by measuring both time-resolved radiated intensity at longer axis of elliptical pump profile (dominant ASE direction) and small signal gain (SSG) in laser amplifier. A cryogenically-cooled total-reflection active-mirror laser consisting of 9.8 at.% doped, 0.6-mm thick Yb:YAG and un-doped YAG trapezoidal ceramics cap was used as a sample. The phased transitions from spontaneous emission (SE) to ASE and from ASE to PL have been unambiguously observed. For several pump beam diameters, the ASE gain parameter g(0)l(ASE) at ASE threshold was about 3, and the SSG coefficient was down to about 65% until PL started. To the best of our knowledge, this is the first quantitative characterization of the ASE/PL effects in the thin disk laser with an anti-ASE cap.
