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Related Experiment Video

Updated: May 10, 2026

Implementation of a Reference Interferometer for Nanodetection
16:11

Implementation of a Reference Interferometer for Nanodetection

Published on: April 26, 2014

Low cost wafer metrology using a NIR low coherence interferometry.

Young Gwang Kim1, Yong Bum Seo, Ki-Nam Joo

  • 1Department of Photonics Engineering, Chosun University, Dong-gu, Gwanju, Republic of Korea.

Optics Express
|June 6, 2013
PubMed
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A new, low-cost silicon wafer metrology system uses low coherence interferometry with near-infrared light. This system efficiently measures surface profiles and optical thickness, providing essential dimensional data for silicon wafers.

Area of Science:

  • Materials Science
  • Optical Metrology
  • Semiconductor Manufacturing

Background:

  • Accurate metrology is crucial for semiconductor manufacturing.
  • Existing silicon wafer measurement systems can be costly and time-consuming.

Purpose of the Study:

  • To propose and verify a low-cost silicon wafer metrology system.
  • To integrate two low coherence interferometry techniques for comprehensive wafer characterization.

Main Methods:

  • Utilized low coherence scanning interferometry (LCSI) for surface profile measurement.
  • Employed spectrally-resolved interferometry (SRI) to determine optical thickness.
  • Used near-infrared (NIR) light (around 1 μm) for silicon wafer analysis.
  • Integrated a typical CCD camera for cost-effectiveness.

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Published on: February 27, 2013

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
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Related Experiment Videos

Last Updated: May 10, 2026

Implementation of a Reference Interferometer for Nanodetection
16:11

Implementation of a Reference Interferometer for Nanodetection

Published on: April 26, 2014

Characterization of Surface Modifications by White Light Interferometry: Applications in Ion Sputtering, Laser Ablation, and Tribology Experiments
11:47

Characterization of Surface Modifications by White Light Interferometry: Applications in Ion Sputtering, Laser Ablation, and Tribology Experiments

Published on: February 27, 2013

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
06:56

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes

Published on: May 23, 2017

Main Results:

  • Successfully verified a low-cost metrology system for silicon wafers.
  • Demonstrated the combined use of LCSI and SRI for efficient measurement.
  • Achieved adequate dimensional information including surface profiles and optical thickness.

Conclusions:

  • The proposed system offers an inexpensive solution for silicon wafer metrology.
  • Combining LCSI and SRI reduces measurement time while providing comprehensive data.
  • The use of NIR light and a standard CCD camera contributes to the system's low cost.