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III-V-on-silicon multi-frequency lasers.

S Keyvaninia1, S Verstuyft, S Pathak

  • 1Photonics Research Group, Ghent University-imec, Ghent, Belgium. shahram.keyvaninia@intec.ugent.be

Optics Express
|June 6, 2013
PubMed
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Researchers developed compact multi-frequency lasers by integrating III-V optical amplifiers with silicon waveguides. These lasers operate stably up to 60°C, demonstrating potential for advanced photonic applications.

Area of Science:

  • Photonics and Semiconductor Devices
  • Heterogeneous Integration
  • Integrated Optics

Background:

  • III-V semiconductor materials offer excellent optical gain.
  • Silicon photonics enables compact and cost-effective waveguide devices.
  • Heterogeneous integration is key to combining disparate material functionalities.

Purpose of the Study:

  • To realize compact multi-frequency lasers.
  • To leverage heterogeneous integration of III-V amplifiers and silicon demultiplexers.
  • To investigate laser performance and stability.

Main Methods:

  • Adhesive wafer bonding for III-V/silicon integration.
  • Utilizing arrayed waveguide grating routers (AWGRs) and ring resonators as demultiplexers.
  • Characterizing lasing threshold, output power, and temperature stability.

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Main Results:

  • Achieved lasing with low threshold currents (30–40 mA).
  • Demonstrated output powers in the milliwatt range.
  • Confirmed stable single longitudinal mode laser operation up to 60°C.

Conclusions:

  • Heterogeneously integrated III-V/silicon lasers are viable for multi-frequency operation.
  • Short cavity lengths due to silicon waveguides ensure stable single-mode lasing.
  • The developed lasers show promise for compact and robust photonic systems.