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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Published on: August 2, 2019

Insulating behavior at the neutrality point in single-layer graphene.

F Amet¹, J R Williams, K Watanabe

¹Department of Applied Physics, Stanford University, Stanford, California 94305, USA.

Physical Review Letters

|June 11, 2013

Summary

This summary is machine-generated.

At very low temperatures, graphene

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Area of Science:

Condensed matter physics
Materials science

Background:

Graphene's electronic properties at low temperatures are crucial for understanding quantum phenomena.
Boron nitride is a key substrate for high-quality graphene devices.

Purpose of the Study:

Investigate low-temperature conductance in graphene on boron nitride.
Characterize the insulating behavior at the Dirac point.

Main Methods:

Measurements of electrical conductance in graphene on boron nitride.
Temperature variation down to 20 mK.
Application of perpendicular magnetic fields.

Main Results:

Observed diverging resistivity with power-law behavior at low temperatures.
Reached several megohms per square resistivity at 20 mK.
Transitioned to a broken-valley-symmetry, ν=0 quantum Hall state under magnetic field.

Conclusions:

The insulating behavior at zero magnetic field is attributed to broken valley symmetry.
This contrasts with typical conductivity saturation observed in other systems.
Suggests novel electronic states in graphene/boron nitride heterostructures.