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Published on: May 24, 2020
Enhanced performance of solution-processed TESPE-ADT thin-film transistors
Liang-Hsiang Chen1, Tarng-Shiang Hu, Peng-Yi Huang
1Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China.
Summary
Researchers explored a new organic semiconductor, TESPE-ADT, for thin-film transistors (TFTs). Solution processing techniques improved device performance, achieving high hole mobilities in organic field-effect transistors (OFETs).
Area of Science:
- Materials Science
- Organic Electronics
- Semiconductor Physics
Background:
- Organic semiconductors are crucial for developing flexible and low-cost electronic devices.
- Anthradithiophene derivatives offer promising properties for organic thin-film transistors (OTFTs).
Purpose of the Study:
- To investigate the potential of 5,11-bis(4-triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT) as a semiconducting material in OTFTs.
- To optimize the electrical performance of TESPE-ADT-based devices through solution processing and post-treatment.
Main Methods:
- Thin films of TESPE-ADT were fabricated using spin-coating and drop-casting techniques on various gate dielectrics.
- Post-treatment methods were applied to enhance film morphology and microstructure.
- Electrical characteristics of the fabricated p-channel organic field-effect transistors (OFETs) were measured.
Main Results:
- Achieved high hole mobilities up to ~0.12 cm(2) V(-1) s(-1) in p-channel OTFTs.
- Demonstrated a correlation between film morphology, microstructure, processing conditions, and device performance.
- Successfully utilized TESPE-ADT as a solution-processed semiconducting layer.
Conclusions:
- Solution-processed TESPE-ADT is a viable material for high-performance OTFTs.
- Optimized processing conditions significantly enhance the charge carrier mobility.
- Further research into microstructure-property relationships can lead to even better organic electronic devices.
