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The Kondo effect in three-dimensional topological insulators.

Xianhao Xin¹, Mao-Chuang Yeh

¹Department of Physics, University of Illinois at Urbana-Champaign, 1110 W Green Street, Urbana, IL 61801-3080, USA. xin2@illinois.edu

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|June 20, 2013

Summary

Magnetic impurities significantly alter transport properties in topological insulators, causing oscillatory surface resistivity unlike the typical Kondo effect. This non-perturbative behavior, confirmed by renormalization group analysis, may explain experimental low-temperature dips.

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Area of Science:

Condensed matter physics
Materials science
Quantum mechanics

Background:

Topological insulators possess unique surface states with potential applications in quantum computing and spintronics.
Understanding the influence of magnetic impurities on these surface states is crucial for device development.

Purpose of the Study:

To investigate the impact of magnetic impurities on the transport properties of three-dimensional topological insulators.
To elucidate the mechanism behind observed experimental phenomena in surface transport.

Main Methods:

Second-order perturbation theory and Boltzmann transport equation for resistivity calculations.
Variational method and renormalization group (RG) analysis to determine Kondo temperature.
Study of RG flows to analyze coupling regimes.

Main Results:

A non-perturbative behavior in magnetically induced resistivity when electron spins and impurity spins are antiferromagnetically coupled.
Oscillatory surface resistivity, deviating from the isotropic behavior seen in the conventional Kondo effect.
Confirmation of non-perturbative behavior and flow into a strong coupling regime under antiferromagnetic coupling.

Conclusions:

The study provides a theoretical explanation for the low-temperature dip observed in experimental R-T curves of topological insulators.
Antiferromagnetic coupling between electrons and magnetic impurities is identified as a potential cause for the observed oscillatory surface resistivity.
The findings offer insights into controlling and predicting the transport properties of topological insulators with magnetic impurities.